Progress in doping semiconductor nanowires during growth

Towards controlled Doping in III-V Semiconductor Nanowires

Nanowires are quasi-one-dimensional single crystals with lateral dimensions that can be scaled-down to only a few nanometers. They can simultaneously act as active components and interconnects and therefore fulfill the two basic functions of any active device. However, controlled doping of III-V nanowires is challenging due to strong Fermi-level pinning as well as the kinetic and thermodynamic ...

Vapor–Liquid–Solid Growth of Semiconductor Nanowires

Nanowires make possible to manipulate light in novel methods and thus are promising materials for advanced optoelectronics. To exploit the potential, the growth behavior has to be controlled since it dominates the physical and chemical states and, in turn, the optical properties of nanowires. In this chapter, the vapor–liquid–solid (VLS) mechanism for the growth and modulation of nanowires was ...

Synthesis and Post-growth Doping of Silicon Nanowires

High-quality silicon nanowires SiNWs were synthesized via a thermal evaporation method without the use of catalysts. Scanning electron microscopy and transmission electron microscopy showed that SiNWs were long and straight crystalline silicon with an oxide sheath. Field effect transistors were fabricated to investigate the electrical transport properties. Devices on as-grown material were p-ch...

Semiconducting Oxide Nanowires: Growth, Doping and Device applications

Ballistic superconductivity in semiconductor nanowires

Semiconductor nanowires have opened new research avenues in quantum transport owing to their confined geometry and electrostatic tunability. They have offered an exceptional testbed for superconductivity, leading to the realization of hybrid systems combining the macroscopic quantum properties of superconductors with the possibility to control charges down to a single electron. These advances b...